Title :
Preparation and characterization of CuAlSe2 thin films prepared by co-evaporation
Author :
Reddy, Y.B.K. ; Raja, V. Sundara
Author_Institution :
Solar Energy Lab., Sri Venkateswara Univ., Tirupati, India
Abstract :
CuAlSe2 thin films were deposited using three-source co-evaporation technique. The spectral transmittance data in the wavelength range 350-900 nm revealed three characteristic band gaps 2.62 eV, 2.73 eV and 2.91 eV. The first one is attributed to fundamental optical absorption process. Additional band gaps are attributed to the transitions occurring from the energy levels arising out of crystal field and spin-orbit interactions. Powder X-ray diffraction pattern revealed the films to be chalcopyrite in structure. The lattice parameters determined from XRD data were found to be a=0.562 nm and c=1.099 nm. The spin orbit (ΔSO) and crystal field (ΔCF) parameters are found to be 0.19 and -0.12 respectively. The resistivity of the films at room temperature was found to be 300 Ωcm.
Keywords :
X-ray diffraction; aluminium compounds; copper compounds; crystal field interactions; electrical resistivity; energy gap; lattice constants; optical constants; semiconductor thin films; spin-orbit interactions; ternary semiconductors; vacuum deposited coatings; 300 K; 300 ohmcm; 350 to 900 nm; CuAlSe2; CuAlSe2 thin films; X-ray diffraction; XRD; band gaps; characterization; co-evaporation; crystal field interactions; lattice parameters; resistivity; spectral transmittance; spin-orbit interactions; Electromagnetic wave absorption; Energy states; Lattices; Optical diffraction; Optical films; Photonic band gap; Powders; Sputtering; X-ray diffraction; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190652
