DocumentCode :
3343779
Title :
Origin of the PL-band characteristic for the GaAs-on-GaInP interface in GaAs /GaInP/GaAs/ doublebeterostructures
Author :
Gladkov, P. ; Nohavica, D.
fYear :
2004
fDate :
17-21 Oct. 2004
Firstpage :
17
Lastpage :
20
Abstract :
In this work we report PL characterization of single heterostructures obtained when GaAs is grown on top of GaO.51InO.49P by LPE. Wide structured PL band in the range 1.4-1.5 eV is characteristic for these structures. The obtained results reveal that this band can be related to the presence of arsenic vacancies in the GaAs layer adjacent to interface. The component with peak at 1.454 eV in this band we ascribe to recombination within a complex (VAs - group IV atomAS)
Keywords :
Atomic layer deposition; Bismuth; Epitaxial growth; Epitaxial layers; Gallium arsenide; Heterojunctions; Lattices; Optoelectronic devices; Radiative recombination; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location :
Smolenice Castle, Slovakia
Print_ISBN :
0-7803-8335-7
Type :
conf
DOI :
10.1109/ASDAM.2004.1441147
Filename :
1441147
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3343779
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