Title :
Refractive index properties of oxygenated amorphous CdS thin film deposited by rf-sputtering
Author :
Rejon, Victor ; Loeza, Mariely ; Riech, Ines ; Pena, Juan Luis
Author_Institution :
Appl. Phys. Dept., CINVESTAV-IPN, Mérida, Mexico
Abstract :
The refractive index of 1.21 to 2.38 of oxygenated amorphous CdS thin films can be fabricated by using reactive RF-Sputtering from CdS target of 4N of purity. The oxygenated amorphous CdS with 2.3 of refractive index has a band gap of 2.5 e V. These properties are optically appropriate for matching the ITO and CdTe thin films in amorphous-CdS/CdTe solar cells application. For 10-20% of Oxygen/Argon and 50-70 Watts of the RF-Sputtering power, all thin film shows high transmittance, low refractive index of 1.21 and 3.7 eV of band gap. XRD spectra shows amorphous evidence. This thin film could be used as an antireflective layer on glass substrate.
Keywords :
II-VI semiconductors; X-ray diffraction; amorphous semiconductors; cadmium compounds; energy gap; oxygen; refractive index; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; CdS; CdS:O; XRD spectra; antireflective layer; band gap; glass substrate; oxygenated amorphous thin film; power 50 W to 70 W; reactive RF-sputtering; refractive index; solar cells; transmittance; Argon; Optical films; Optical refraction; Photonic band gap; Photovoltaic cells; Refractive index; Amorphous CdS; Antireflective thin film; Oxygenated CdS; Refractive index;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744348
