DocumentCode :
3343811
Title :
Rapid thermal processing of CIS precursors
Author :
Kerr, L.L. ; Kim, S. ; Kincal, S. ; Ider, M. ; Yoon, S. ; Anderson, T.J.
Author_Institution :
Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
676
Lastpage :
679
Abstract :
An alternative process for CuInSe2 formation is presented. In this approach, a binary two-layer precursor CuSe/In-Se is first deposited on a Mo/glass substrate at low temperature by migration enhanced epitaxy (MEE). When the Se ambient is controlled, rapid thermal processing (RTP) is able to synthesize single phase CuInSe2. The structure, morphology, and composition of the films were characterized by XRD, SEM and ICP.
Keywords :
X-ray diffraction; copper compounds; rapid thermal annealing; scanning electron microscopy; semiconductor epitaxial layers; ternary semiconductors; CIS precursors; CuInSe2; CuSe; ICP; In-Se; MEE; Mo-SiO2; RTP; SEM; SiO2; XRD; composition; migration enhanced epitaxy; morphology; rapid thermal processing; structure; Annealing; Computational Intelligence Society; Epitaxial growth; Isothermal processes; Morphology; Plasma temperature; Rapid thermal processing; Solids; Substrates; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190655
Filename :
1190655
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3343811
بازگشت