Characterization of polycrystalline 3CB-SiC thin films for MEMS and pressure sensors application

Characterization of cubic 3C(B)-SiC samples for pressure sensors and micro-electromechanical system (MEMS) applications is reported in this paper. Polycrystalline 3C(B)-SiC thinjilms have been deposited on oxidized Si by low pressure chemical vapor deposition (LPCVD) to obtain bi-layer structures {Si(lOO)/SiO₂/poly 3C-SiC}. The films have been preliminary characterized by atomic force microscopy (AFM) and surface photovollage spectroscopy (SPS) and then ohmic contacts have been optimized by transmission line method (TLM) analyses performed at different temperatures focusing the attention on the evaluation of the bulk resistivity (p), the specific contact resistivity (pJ.