DocumentCode :
3343906
Title :
Improving thin film solar cells with atomic layer deposited ZnO: Highly tunable buffer, intrinsic, and top contact layers in a single fabrication process
Author :
Thomas, Manoj A. ; Jingbiao Cui
Author_Institution :
Dept. of Phys. & Astron., Univ. of Arkansas at Little Rock, Little Rock, AR, USA
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
1187
Lastpage :
1191
Abstract :
A variety of highly tunable ZnO films have been deposited by atomic layer deposition. The optical and electrical properties of the ZnO films are well controlled by either doping with Mg or utilizing in-situ oxygen or hydrogen plasma treatments during deposition. The wide range of physical properties of these ZnO films enables their use as buffer, intrinsic, and top contact layers in thin film solar cells. The single fabrication process maintains high quality interfaces between each layer in the solar cell, and the precise control of the ZnO films´ properties allows for true device optimization.
Keywords :
II-VI semiconductors; atomic layer deposition; buffer layers; doping; plasma materials processing; semiconductor thin films; solar cells; zinc compounds; ZnO; atomic layer deposition; buffer layers; contact layers; doping; electrical properties; highly tunable ZnO films; hydrogen plasma treatments; in-situ oxygen plasma treatments; instrinsic layers; optical properties; single fabrication process; thin film solar cells; true device optimization; Buffer layers; Conductivity; Hydrogen; Photovoltaic cells; Plasmas; Zinc oxide; doping; plasma materials processing; semiconductor films; solar energy; zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744352
Filename :
6744352
Link To Document :
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