DocumentCode :
3343952
Title :
Importance of air ambient during CdCl2 treatment of thin film CdTe solar cells studied through temperature dependent admittance spectroscopy
Author :
Nollet, Peter ; Burgelman, Marc ; Degrave, Stefaan ; Beier, Jutta
Author_Institution :
ELIS, Ghent Univ., Belgium
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
704
Lastpage :
707
Abstract :
CdCl2 treatment is a crucial step in the production of high efficiency CdTe solar cells. Thin-film CdS/CdTe solar cells have been prepared by ANTEC GmbH (Germany) both in vacuum and in air ambient. We compared these series of samples using the admittance spectroscopy (AS) technique. The presence of air increases remarkably the shallow acceptor concentration in the CdTe, confirming earlier studies. A broad band of deep defects is still found in all samples (independent of the activation). We also illustrate how the presence of a Schottky back contact to the CdTe solar cells introduces a capacitance step in the AS measurements, enabling the determination of the barrier height.
Keywords :
II-VI semiconductors; Schottky barriers; cadmium compounds; capacitance; deep levels; electric admittance; etching; impurity states; semiconductor thin films; solar cells; CdCl2; CdCl2 treatment; CdS-CdTe; Schottky back contact; air ambient; barrier height determination; capacitance step; deep defects; etching; shallow acceptor concentration; temperature dependent admittance spectroscopy; thin-film CdS/CdTe solar cells; Admittance measurement; Capacitance measurement; Doping; Frequency; Gold; Photovoltaic cells; Spectroscopy; Temperature dependence; Temperature measurement; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190662
Filename :
1190662
Link To Document :
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