DocumentCode :
3343995
Title :
Space charges and deep traps in polyethylene — Ab initio simulations of chemical impurities and defects
Author :
Unge, M. ; Tornkvist, Christer ; Christen, Thomas
Author_Institution :
ABB Corp. Res., Vasteras, Sweden
fYear :
2013
fDate :
June 30 2013-July 4 2013
Firstpage :
935
Lastpage :
939
Abstract :
In the framework of Density Functional Theory (DFT), we calculate the electronic structure of an amorphous polyethylene (PE) structure including defects and impurities. In particular, we provide tables with trap levels for defects like carbonyl groups at different chain locations, various double and triple bonds, hydroxyl and vinyl groups, and for impurities relevant for insulation applications, like acetophenone, alpha-methylstyrene, cumene, cumyl-alcohol, and water. It turns out that conjugated double-bonds and carbonyl groups yields generally the deepest traps. Shallow traps are seen for single double bonds in the PE chain, hydroxyl groups, and water. Traps originating from water, vinyl or hydroxyl groups have depths similar to the band gap of the amorphous-crystalline interface phase of PE; thus, these later defects could at high enough concentration bridge the interface phases yielding a sub-band in the band gap of PE.
Keywords :
crystallisation; insulation; polymers; space charge; PE chain; ab initio simulations; acetophenone; alpha-methylstyrene; amorphous-crystalline interface phase; band gap; carbonyl groups yields; chain locations; chemical defects; chemical impurities; conjugated double-bonds; cumene; cumyl-alcohol; deep traps; density functional theory; double bonds; functional amorphous polyethylene structure; hydroxyl groups; space charges; sub-band; triple bonds; vinyl groups; Chemicals; Dielectrics; Discrete Fourier transforms; Electron traps; Impurities; Polyethylene; Space charge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid Dielectrics (ICSD), 2013 IEEE International Conference on
Conference_Location :
Bologna
ISSN :
2159-1687
Print_ISBN :
978-1-4799-0807-3
Type :
conf
DOI :
10.1109/ICSD.2013.6619874
Filename :
6619874
Link To Document :
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