• DocumentCode
    3344013
  • Title

    Ion implanted metal wrap through silicon solar cells

  • Author

    Bateman, Nicholas ; Tonini, D. ; Galiazzo, Marco ; Cellere, Giorgio

  • Author_Institution
    Appl. Mater., Varian Semicond. Equip., Gloucester, MA, USA
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Firstpage
    1203
  • Lastpage
    1206
  • Abstract
    Ion implanted emitters show reduced recombination leading to solar cells with better light collection and voltage[1]. Metal wrap through solar cells reduce shading losses and allow improved series resistance [2]. As such, the two technologies should be complementary. We present results for the first ion implanted metal wrap through cells built at Applied Materials. The cells show the expected improvement in current over baseline cells, and match the baseline voltage. Our MWT cells are limited by poor fill factor due to high series resistance. We see no difference in cell efficiency between process flows for which the hole drilling is done before texturing and before metallization, and no difference in via shunting. Our results show promise for the combination of ion implantation with MWT technology.
  • Keywords
    drilling; elemental semiconductors; ion implantation; metallisation; passivation; silicon; solar cells; Ion implanted metal wrap; MWT cell processing; cell efficiency; fill factor; hole drilling; ion implanted emitters; light collection; series resistance; shading losses; silicon solar cells; Ion implantation; Metallization; Photovoltaic cells; Resistance; Silicon; Standards; crystalline silicon photovoltaics; ion implantation; metal wrap through solar cells; passivation and advanced device; solar cell processing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6744356
  • Filename
    6744356