DocumentCode
3344013
Title
Ion implanted metal wrap through silicon solar cells
Author
Bateman, Nicholas ; Tonini, D. ; Galiazzo, Marco ; Cellere, Giorgio
Author_Institution
Appl. Mater., Varian Semicond. Equip., Gloucester, MA, USA
fYear
2013
fDate
16-21 June 2013
Firstpage
1203
Lastpage
1206
Abstract
Ion implanted emitters show reduced recombination leading to solar cells with better light collection and voltage[1]. Metal wrap through solar cells reduce shading losses and allow improved series resistance [2]. As such, the two technologies should be complementary. We present results for the first ion implanted metal wrap through cells built at Applied Materials. The cells show the expected improvement in current over baseline cells, and match the baseline voltage. Our MWT cells are limited by poor fill factor due to high series resistance. We see no difference in cell efficiency between process flows for which the hole drilling is done before texturing and before metallization, and no difference in via shunting. Our results show promise for the combination of ion implantation with MWT technology.
Keywords
drilling; elemental semiconductors; ion implantation; metallisation; passivation; silicon; solar cells; Ion implanted metal wrap; MWT cell processing; cell efficiency; fill factor; hole drilling; ion implanted emitters; light collection; series resistance; shading losses; silicon solar cells; Ion implantation; Metallization; Photovoltaic cells; Resistance; Silicon; Standards; crystalline silicon photovoltaics; ion implantation; metal wrap through solar cells; passivation and advanced device; solar cell processing;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744356
Filename
6744356
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