Preparation and properties of GaInP/sub 2/GaAs heterostructures

Author

Nohavica, D. ; Gladkov, P. ; Zdansky, K.

fYear

2004

fDate

17-21 Oct. 2004

Firstpage

57

Lastpage

60

Abstract

Growth ofihe Ga_xIn_1-xP/GaAs(J00) heterostructuresfrom the liquid phase wru optimized at 800°C to obtain thick epitaxial layers. Experimental conditions for growth of the mirror like, morphological defects free structures are very narrow. Capping of the ternary layer by GaAs grown from the Bi or Bi-Ga melt was investigated as well. New model of the substrate planarity related defects hru been suggested Sharp boundary between ordered and disord.ereddislocatiolls network in the top Bi:GaAs layer was observed and lattice misfit has been compensated by In addition to produce Bi:Ga_xIn_1-xAs, (x>O.95J- Ga_0.51In_0.49P layers were doped by Te and Mg for n- and p-type layers respectively. Photoluminescence(PL) maxima of the unintentionally doped layers at low temperatures corresponding to the bound exciton (BE) recombination atl.98JeV. The FWHM of the BE line is 7meV.

Keywords

Boats; Epitaxial layers; Gallium arsenide; Optical materials; Optical mixing; Phase measurement; Solids; Substrates; Tellurium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on

Conference_Location

Smolenice Castle, Slovakia

Print_ISBN

0-7803-8335-7

Type

conf

DOI

10.1109/ASDAM.2004.1441157

Filename

1441157