DocumentCode :
3344163
Title :
Correlation between lifetime curve and performance of amorphous silicon/ crystalline silicon heterostructure solar cell
Author :
Ghosh, Koushik ; Herasimenka, Stanislau ; Dauksher, Bill ; Bowden, Stuart
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
1232
Lastpage :
1237
Abstract :
Detailed balance calculations are prevalently used to calculate the thermodynamic limit of performance of photovoltaic devices. This work combines the detailed balance calculations with the lifetime curve to determine the limiting performance of silicon heterostructure solar cell. The detailed balance model uses the state-of-the-art values for the recombination coefficients. The calculation shows that for an undoped silicon with only intrinsic (radiative and auger) recombination mechanisms considered, the efficiency limit is 29.63 % at 26 μm. However, the value changes with the inclusion of the extrinsic recombination processes that occurs due to the presence of surfaces and defects within crystalline silicon.
Keywords :
amorphous semiconductors; elemental semiconductors; silicon; solar cells; Si; amorphous silicon; crystalline silicon heterostructure solar cell; lifetime curve; photovoltaic devices; recombination coefficients; Absorption; Charge carrier processes; Limiting; Performance evaluation; Photovoltaic cells; Silicon; Spontaneous emission; a-Si/c-Si heterostructure; detailed balance; efficiency limit; lifetime measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744363
Filename :
6744363
Link To Document :
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