DocumentCode
3344164
Title
Structure and thermoelectric properties of nano-crystalline Rex-Si1-x thin film composites
Author
Burkov, A.T. ; Heinrich, A. ; Gladun, C. ; Pitschke, W. ; Schumann, J.
Author_Institution
Inst. of Solid State & Mater. Res., Dresden, Germany
fYear
1996
fDate
26-29 March 1996
Firstpage
484
Lastpage
490
Abstract
In this report results on phase formation and transport properties of amorphous and nano-crystalline Re-Si thin films are presented. The results imply that the partially crystallized Re-Si films, i.e. films consisting of amorphous and nano-crystalline phases form a new class of heterostructures which are essentially different from binary insulator-metal mixtures. We have found that the resistivity and thermopower of the heterogeneous films consisting of amorphous and nano-crystalline phases do not follow the well known effective medium approximation when the ratio between these two phases is varied. Both phase composition and crystalline grain size appear to be important parameters for the thermoelectric material optimization.
Keywords
amorphous semiconductors; composite materials; electrical resistivity; grain size; nanostructured materials; narrow band gap semiconductors; rhenium compounds; semiconductor thin films; thermoelectric power; Re-Si; amorphous Re-Si thin films; crystalline grain size; heterogeneous films; heterostructures; nano-crystalline Re-Si thin films; nano-crystalline Re/sub x/-Si/sub 1-x/ thin film composites; nano-crystalline phases; partially crystallized Re-Si films; phase composition; phase formation; resistivity; semiconductor; structure; thermoelectric material optimization; thermoelectric properties; thermopower; transport properties; Amorphous materials; Annealing; Conducting materials; Crystalline materials; Crystallization; Grain size; Semiconductor films; Silicides; Thermoelectricity; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location
Pasadena, CA, USA
Print_ISBN
0-7803-3221-0
Type
conf
DOI
10.1109/ICT.1996.553532
Filename
553532
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