• DocumentCode
    3344164
  • Title

    Structure and thermoelectric properties of nano-crystalline Rex-Si1-x thin film composites

  • Author

    Burkov, A.T. ; Heinrich, A. ; Gladun, C. ; Pitschke, W. ; Schumann, J.

  • Author_Institution
    Inst. of Solid State & Mater. Res., Dresden, Germany
  • fYear
    1996
  • fDate
    26-29 March 1996
  • Firstpage
    484
  • Lastpage
    490
  • Abstract
    In this report results on phase formation and transport properties of amorphous and nano-crystalline Re-Si thin films are presented. The results imply that the partially crystallized Re-Si films, i.e. films consisting of amorphous and nano-crystalline phases form a new class of heterostructures which are essentially different from binary insulator-metal mixtures. We have found that the resistivity and thermopower of the heterogeneous films consisting of amorphous and nano-crystalline phases do not follow the well known effective medium approximation when the ratio between these two phases is varied. Both phase composition and crystalline grain size appear to be important parameters for the thermoelectric material optimization.
  • Keywords
    amorphous semiconductors; composite materials; electrical resistivity; grain size; nanostructured materials; narrow band gap semiconductors; rhenium compounds; semiconductor thin films; thermoelectric power; Re-Si; amorphous Re-Si thin films; crystalline grain size; heterogeneous films; heterostructures; nano-crystalline Re-Si thin films; nano-crystalline Re/sub x/-Si/sub 1-x/ thin film composites; nano-crystalline phases; partially crystallized Re-Si films; phase composition; phase formation; resistivity; semiconductor; structure; thermoelectric material optimization; thermoelectric properties; thermopower; transport properties; Amorphous materials; Annealing; Conducting materials; Crystalline materials; Crystallization; Grain size; Semiconductor films; Silicides; Thermoelectricity; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1996., Fifteenth International Conference on
  • Conference_Location
    Pasadena, CA, USA
  • Print_ISBN
    0-7803-3221-0
  • Type

    conf

  • DOI
    10.1109/ICT.1996.553532
  • Filename
    553532