DocumentCode :
3344164
Title :
Structure and thermoelectric properties of nano-crystalline Rex-Si1-x thin film composites
Author :
Burkov, A.T. ; Heinrich, A. ; Gladun, C. ; Pitschke, W. ; Schumann, J.
Author_Institution :
Inst. of Solid State & Mater. Res., Dresden, Germany
fYear :
1996
fDate :
26-29 March 1996
Firstpage :
484
Lastpage :
490
Abstract :
In this report results on phase formation and transport properties of amorphous and nano-crystalline Re-Si thin films are presented. The results imply that the partially crystallized Re-Si films, i.e. films consisting of amorphous and nano-crystalline phases form a new class of heterostructures which are essentially different from binary insulator-metal mixtures. We have found that the resistivity and thermopower of the heterogeneous films consisting of amorphous and nano-crystalline phases do not follow the well known effective medium approximation when the ratio between these two phases is varied. Both phase composition and crystalline grain size appear to be important parameters for the thermoelectric material optimization.
Keywords :
amorphous semiconductors; composite materials; electrical resistivity; grain size; nanostructured materials; narrow band gap semiconductors; rhenium compounds; semiconductor thin films; thermoelectric power; Re-Si; amorphous Re-Si thin films; crystalline grain size; heterogeneous films; heterostructures; nano-crystalline Re-Si thin films; nano-crystalline Re/sub x/-Si/sub 1-x/ thin film composites; nano-crystalline phases; partially crystallized Re-Si films; phase composition; phase formation; resistivity; semiconductor; structure; thermoelectric material optimization; thermoelectric properties; thermopower; transport properties; Amorphous materials; Annealing; Conducting materials; Crystalline materials; Crystallization; Grain size; Semiconductor films; Silicides; Thermoelectricity; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location :
Pasadena, CA, USA
Print_ISBN :
0-7803-3221-0
Type :
conf
DOI :
10.1109/ICT.1996.553532
Filename :
553532
Link To Document :
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