DocumentCode :
3344183
Title :
Effect of film thickness on the dielectric properties and charge storage in PMMA thin films
Author :
Orrit-Prat, Jordi ; Boudou, Laurent ; Villeneuve, Christina ; Teyssedre, Gilbert ; Behar, S. ; Ressier, L. ; Diaz, Rodolfo
Author_Institution :
LAPLACE, Univ. de Toulouse, Toulouse, France
fYear :
2013
fDate :
June 30 2013-July 4 2013
Firstpage :
350
Lastpage :
353
Abstract :
In this work, we demonstrate the excellent charge retention capability of spin-coated Polymethylmethacrylate (PMMA) 200 nm thin films previously charged by atomic force microscopy. In order to elucidate the mechanisms involved in the charge transport and charge storage in PMMA films, the conductivity of 200nm thin PMMA films was analyzed on Metal-Insulation-Metal (MIM) structures. A wide range of electric fields was applied on these structures and the charge and discharge currents were recorded. The thermal dependence of the conduction mechanisms was determined for temperatures below the PMMA glass transition temperature. These results were compared to those obtained for 50μm thick PMMA films in which the conductivity appears much smaller. The effects of PMMA thickness on charge transport are discussed.
Keywords :
MIM structures; atomic force microscopy; electric fields; electrical conductivity; polymer films; spin coating; thin films; MIM structures; PMMA glass transition temperature; PMMA thin films; atomic force microscopy; charge currents; charge retention capability; charge storage; charge transport; conduction mechanisms; dielectric property; discharge currents; electric fields; film thickness effect; metal-insulation-metal structures; size 200 nm; size 50 mum; spin-coated polymethylmethacrylate thin films; thermal dependence; Conductivity; Dielectrics; Electric fields; Temperature measurement; Thick films; Writing; Kelvin force microscopy; Polymethylmethacrylate; charge writing by atomic force microscopy; conductivity; thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid Dielectrics (ICSD), 2013 IEEE International Conference on
Conference_Location :
Bologna
ISSN :
2159-1687
Print_ISBN :
978-1-4799-0807-3
Type :
conf
DOI :
10.1109/ICSD.2013.6619883
Filename :
6619883
Link To Document :
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