Device modeling and simulation of CIS-based solar cells

Author

Huang, C.H. ; Li, Sheng S. ; Anderson, T.J.

Author_Institution

Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

748

Lastpage

751

Abstract

A comprehensive device modeling and numerical simulation of the performance of Cu(In,Ga)Se₂ (CIGS) solar cells with an emphasis on band-gap engineering of the CIGS absorber layers has been carried out using the AMPS-1D device simulation program. A variety of graded band-gap structures including back surface grading and double grading of the CIGS absorber layers are examined. The device physics and performance parameters of the absorber layer structures with different band-gap profiles are analyzed. Based on the simulation results, an optimal graded band-gap structure for the CIGS cell is proposed. Additionally, the dependence of performance parameters for the CIGS cells on the existence, carrier mobility, carrier density, and thickness of the Cu-poor surface defect layer on the CIGS absorber layers are also investigated.

Keywords

band structure; carrier density; carrier mobility; copper compounds; gallium compounds; indium compounds; semiconductor device models; solar cells; ternary semiconductors; AMPS-1D device simulation program; CIGS; CIS-based solar cells; Cu(InGa)Se₂; Cu-poor surface defect layer thickness; back surface grading; band-gap engineering; carrier density; carrier mobility; device modeling; device simulation; double grading; numerical simulation; Analytical models; Charge carrier density; Computational Intelligence Society; Computational modeling; Computer simulation; Conductivity; Performance analysis; Photonic band gap; Photovoltaic cells; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190673

Filename

1190673