Title :
Experimental study of the plateau-to-plateau transitions in the integer quantum hall effect in InGaAs/InP heterostructures
Author :
Podor, B. ; Kovacs, Gy. ; Remenyi, C.
Abstract :
We report on temperature scaling experiments on the plateau-to-plateau transitions in the integer quantum Hall effect in InO.53Ga0.47AS/lnP heterostructures. The scaling exponent for the transitions between the quantum Hall plateaus was found to have a value of K ~ 0.6-0.8. The obtained values are interpreted in terms of the relevant inelastic electron scattering mechanisms.
Keywords :
Conductivity; Electrons; Hall effect; Indium gallium arsenide; Indium phosphide; Magnetic fields; Materials science and technology; Particle scattering; Physics; Temperature;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location :
Smolenice Castle, Slovakia
Print_ISBN :
0-7803-8335-7
DOI :
10.1109/ASDAM.2004.1441170
