Title :
Removal of oxide ions from ruthenium oxide films by pill injection of nitrogen
Author :
Buc, D. ; Bello, I. ; Mikula, M. ; Kwok, D.T.K. ; Chu, P.K. ; Siub, G.G.
Abstract :
We used the Plasma Immersion Ion Implantation (PIII) technique to implant nitrogen into the rutile RuO2] as-deposited film structure. We investigated the crystallographic structure of deposited and implanted RuO2] film material by XRD measurements. XPS deep profile measurements showed compositional changes due to nitrogen implantation. We measured colour changes and nano-hardness of as-deposited films as , well as the films after implantation with nitrogen. We found changes in the film material after PIII process towards the metallic based Ru structure with decreasing nano-hardness along with changes in the colour properties of Ru films. Process can be use for removal of oxide ions from the RuO2] thin film structure,
Keywords :
Crystalline materials; Electrodes; Implants; Nitrogen; Optical films; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Substrates; Temperature sensors;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location :
Smolenice Castle, Slovakia
Print_ISBN :
0-7803-8335-7
DOI :
10.1109/ASDAM.2004.1441176
