• DocumentCode
    3344410
  • Title

    Removal of oxide ions from ruthenium oxide films by pill injection of nitrogen

  • Author

    Buc, D. ; Bello, I. ; Mikula, M. ; Kwok, D.T.K. ; Chu, P.K. ; Siub, G.G.

  • fYear
    2004
  • fDate
    17-21 Oct. 2004
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    We used the Plasma Immersion Ion Implantation (PIII) technique to implant nitrogen into the rutile RuO2] as-deposited film structure. We investigated the crystallographic structure of deposited and implanted RuO2] film material by XRD measurements. XPS deep profile measurements showed compositional changes due to nitrogen implantation. We measured colour changes and nano-hardness of as-deposited films as , well as the films after implantation with nitrogen. We found changes in the film material after PIII process towards the metallic based Ru structure with decreasing nano-hardness along with changes in the colour properties of Ru films. Process can be use for removal of oxide ions from the RuO2] thin film structure,
  • Keywords
    Crystalline materials; Electrodes; Implants; Nitrogen; Optical films; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Substrates; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
  • Conference_Location
    Smolenice Castle, Slovakia
  • Print_ISBN
    0-7803-8335-7
  • Type

    conf

  • DOI
    10.1109/ASDAM.2004.1441176
  • Filename
    1441176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3344410