Interface properties of group III-nitrides and their importance for electronic devices

Electronic interface properties play an essential role for the performance of semiconductor devices. In this context the present short review discusses - mainly in connection with RF high mobility transistors (HEMTs) - aspects of surface morphology and growth conditions, electronic interface charges arising from bulk polarisation and suiface states, band offsets and Schottky barriers as well as surface passivation of group Ill-nitrides.