DocumentCode
3344525
Title
MSM varactor diodes based on AlGaN/GaN/SiC HEMT layer structures
Author
Marso, M. ; Bernat, J. ; Javorka, P. ; Fox, A. ; Wolter, M. ; Kordos, P.
fYear
2004
fDate
17-21 Oct. 2004
Firstpage
151
Lastpage
154
Abstract
The influence of a carrier supply layer on the electrical properties of MSM diodes based on AIGaNIGaN HEMT layer structures is investigated. The voltage dependence of the Schottky contact capacitance allows the use of the device as varactor diode with CMAX! CMfN ratios up to 17, tuneable by contact geometry. The carrier supply doping determines the sheet carrier density of the twodimensional electron gas channel, which is responsible for the transition voltage and the series resistance of the MSM diode. A device based on the highest doped layer structure shows a cutofffrequency as high as 65 GHz.
Keywords
Aluminum gallium nitride; Capacitance; Doping; Electrodes; Gallium nitride; HEMTs; Schottky diodes; Silicon carbide; Varactors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location
Smolenice Castle, Slovakia
Print_ISBN
0-7803-8335-7
Type
conf
DOI
10.1109/ASDAM.2004.1441182
Filename
1441182
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