DocumentCode :
3344528
Title :
Exciton fine structures and spin relaxation in semiconductor quantum dots
Author :
Takagahara, T.
Author_Institution :
NTT Basic Res. Labs., Kanagawa, Japan
fYear :
1992
fDate :
23-28 May 1992
Firstpage :
47
Lastpage :
48
Abstract :
Summary form only given. Recently, the /spl mu/-photoluminescence spectroscopy or near-field scanning optical microscopy revealed polarization-dependent doublet structures of excitons with fine splitting of about several tens of /spl mu/eV as well as a very narrow linewidth of the same order of magnitude. A localized exciton at a monolayer-high island in narrow quantum wells (QWs) can be regarded as a weakly confined quantum dot (QD)-like state. It was found that the interface of a QW has island-like structures elongated along the [1~10] direction. The photoluminescence (PL) and PL excitation spectra show a fine splitting between two polarized components along [110] and [1~10] directions.
Keywords :
excitons; fine structure; island structure; monolayers; optical microscopy; photoluminescence; semiconductor quantum dots; /spl mu/-photoluminescence spectroscopy; PL excitation spectra; [1~10] direction; exciton double fine line splitting; exciton fine structures; fine splitting; island-like structures; localized exciton; monolayer-high island; near-field scanning optical microscopy; photoluminescence; polarization-dependent doublet structures; polarized components; semiconductor quantum dots; spin relaxation; very narrow linewidth; weakly confined quantum dot; Excitons; Magnetic field measurement; Magnetic fields; Magnetic resonance; Nonlinear optics; Polarization; Quantum dots; Shape; US Department of Transportation; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
Type :
conf
DOI :
10.1109/QELS.1999.807154
Filename :
807154
Link To Document :
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