Title :
Optics on atomically precise quantum dot systems fabricated by cleaved edge overgrowth
Author :
Wegscheider, W. ; Schottky, W.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
Summary form only given. The optical properties of different quantum dot structures consisting of individual dots and pairs of coupled dots have been studied experimentally. The 7/spl times/7/spl times/7 nm/sup 3/ size GaAs quantum dots form at the intersection of three orthogonal quantum wells fabricated by two-fold application of the cleaved edge over-growth method. The high degree of control over shape, composition and position of the dots, achievable by this technique, allows a detailed investigation of the influence of coupling between zero-dimensional objects. In this way an artificial molecule can be assembled from two of such artificial atoms.
Keywords :
III-V semiconductors; epitaxial growth; gallium arsenide; nanotechnology; optical fabrication; photoluminescence; semiconductor growth; semiconductor quantum dots; semiconductor quantum wells; 7 nm; GaAs; GaAs quantum dots; QD composition; QD position; artificial atoms; artificial molecule; atomically precise quantum dot systems; cleaved edge overgrowth; coupled dot pairs; individual dots; leaved edge over-growth method; optical fabrication; optical properties; orthogonal quantum wells; quantum dot structures; shape control; two-fold application; zero-dimensional objects; Atom optics; Energy states; Nonlinear optics; Optical pumping; Quantum dots; Resonance; Signal resolution; Spectroscopy; US Department of Transportation; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807156