Title :
Temperature dependent spectral response measurements for III-V multi-junction solar cells
Author :
Aiken, Daniel ; Stan, Mark ; Murray, Chris ; Sharps, Paul ; Hills, Jenifer ; Clevenger, Brad
Author_Institution :
Emcore Photovoltaics, Albuquerque, NM, USA
Abstract :
Temperature coefficients for the integrated current of all three subcells in a production InGaP/InGaAs/Ge solar cell structure have been measured at temperatures ranging from 5°C to 100°C. The InGaP, InGaAs, and germanium temperature coefficients are 0.011, 0.009, and 0.044 mA/cm2/°C, respectively. This data can be used to design multi-junction solar cells for optimum performance at any specified operating temperature in this range. The predicted current mismatch for a similar triple junction operating at 100°C but designed to be current matched at 28°C is approximately 3%.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; semiconductor device measurement; solar cells; 5 to 100 degC; III-V multi-junction solar cells; InGaP-InGaAs-Ge; InGaP/InGaAs/Ge solar cell structure; current mismatch; integrated current; multi-junction solar cells; temperature coefficients; temperature dependent spectral response measurements; Extraterrestrial measurements; III-V semiconductor materials; Integrated circuit measurements; Photovoltaic cells; Signal resolution; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors; Wavelength measurement;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190704
