Selective high concentration doping of boron near absorber contacts of a laser crystallized silicon thin-film solar cell on glass

Liquid phase crystalline silicon solar cell on glass with lightly doped absorber layer has degradations in V_oc and FF after contact bake. Experimental results provide evidence of elimination of V_oc degradation with selective high concentration doping near absorber contacts. Comparison of cell performance between baseline processed and selectively doped samples are provided. After 43 days, the enhanced cell performance continued, with negligible deviations. In addition, a low series resistance of 1.5 Ω was obtained.