Title :
Elaboration of thermal wet oxidation of AlAs/GaAs distributed bragg reflectors
Author :
Pucicki, D. ; Korbutowicz, R. ; Kania, A. ; Adamiak, B.
Abstract :
The incorporation of oxidized DBR or single AIAs layers into optoelectronics devices with vertical resonant cavity give intense profit due to large difference of refractive index between GaAs and oxidized AIAs layers. bifluence of the thermal wet oxidation process parameters on AIAs/GaAs Distributed Bragg Reflectors (DBR) structural and optical properties has been investigated.
Keywords :
Distributed Bragg reflectors; Gallium arsenide; Optical buffering; Optical microscopy; Optical refraction; Optical saturation; Oxidation; Refractive index; Scanning electron microscopy; Testing;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location :
Smolenice Castle, Slovakia
Print_ISBN :
0-7803-8335-7
DOI :
10.1109/ASDAM.2004.1441188
