DocumentCode
3344722
Title
Radiation tolerance investigation of XAMPS detectors
Author
Carini, G.A. ; Kuczewski, A.J. ; Siddons, D.P.
Author_Institution
SLAC Nat. Accel. Lab., Menlo Park, CA, USA
fYear
2011
fDate
23-29 Oct. 2011
Firstpage
474
Lastpage
476
Abstract
Tolerance of XAMPS detectors to x-ray photons was investigated at the National Synchrotron Light Source. Two experiments were carried out: first JFETs with the same characteristics of the in pixel transistor were irradiated; then the radiation hardness of a 64×64-pixel detector was investigated. An increase of leakage current was observed and significantly reduced after a very low temperature forming gas annealing. These results confirm that this detector is suitable for application at IV generation light sources.
Keywords
annealing; leakage currents; semiconductor counters; tolerance analysis; JFET; National Synchrotron Light Source; X-ray photons; XAMPS detectors; leakage current; radiation hardness; radiation tolerance; very low temperature forming gas annealing; Annealing; Area measurement; JFETs; Out of order; Photonics; Scattering; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location
Valencia
ISSN
1082-3654
Print_ISBN
978-1-4673-0118-3
Type
conf
DOI
10.1109/NSSMIC.2011.6153903
Filename
6153903
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