DocumentCode
3344734
Title
Photoclectrical properties of heterojunction based on transparent semiconducting oxide - semiconductor for photonics application
Author
Domaradzki, I. ; Kaczmarek, D.
fYear
2004
fDate
17-21 Oct. 2004
Firstpage
195
Lastpage
198
Abstract
In the present work the photoelectrical properties ofheterojunction based on thin film of semiconducting metal oxide composed of titanium dioxide doped with vanadium andpalladium deposited on well conductive silicon substrate have been outlined The properties were examined by means of the J- V characteristics upon light illumination and the DBle method.
Keywords
Conductivity; Heterojunctions; Manufacturing; Optical films; Photonics; Pulsed power supplies; Semiconductivity; Semiconductor thin films; Silicon; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location
Smolenice Castle, Slovakia
Print_ISBN
0-7803-8335-7
Type
conf
DOI
10.1109/ASDAM.2004.1441193
Filename
1441193
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