• DocumentCode
    3344757
  • Title

    Smooth GaN recess wet photoelectrochemical etching

  • Author

    Gregusova, D. ; Novák, J. ; Hardtdegen, H. ; Soltys, J. ; Kostic, I. ; Gregus, J. ; Kordos, P.

  • fYear
    2004
  • fDate
    Oct. 17-21, 2004
  • Firstpage
    199
  • Lastpage
    202
  • Keywords
    Contacts; Electrons; Gallium nitride; Oxidation; Photoconductivity; Rough surfaces; Surface roughness; Temperature; Topology; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
  • Print_ISBN
    0-7803-8335-7
  • Type

    conf

  • DOI
    10.1109/ASDAM.2004.1441194
  • Filename
    1441194