DocumentCode
3344757
Title
Smooth GaN recess wet photoelectrochemical etching
Author
Gregusova, D. ; Novák, J. ; Hardtdegen, H. ; Soltys, J. ; Kostic, I. ; Gregus, J. ; Kordos, P.
fYear
2004
fDate
Oct. 17-21, 2004
Firstpage
199
Lastpage
202
Keywords
Contacts; Electrons; Gallium nitride; Oxidation; Photoconductivity; Rough surfaces; Surface roughness; Temperature; Topology; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Print_ISBN
0-7803-8335-7
Type
conf
DOI
10.1109/ASDAM.2004.1441194
Filename
1441194
Link To Document