• DocumentCode
    3344768
  • Title

    Structural modifications of InAs based materials for mid-infrared optoelectronic devices

  • Author

    Nohavica, D. ; Krier, A.

  • fYear
    2004
  • fDate
    17-21 Oct. 2004
  • Firstpage
    203
  • Lastpage
    206
  • Abstract
    Anisotropic and isotropic etchants are very useful in preparation of lnAs based devices, Polycarboxylic acids are very interesting as stroctural and selective etchants and Brrbased systems have been found to give good results for chemical polishing and etching of A3B5 semiconductors, We investigated both systems with a view towards applications in InAs based optoelectronic devices.
  • Keywords
    Anisotropic magnetoresistance; Chemicals; Gallium arsenide; Hafnium; Indium gallium arsenide; Optoelectronic devices; Physics; Resists; Sputter etching; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
  • Conference_Location
    Smolenice Castle, Slovakia
  • Print_ISBN
    0-7803-8335-7
  • Type

    conf

  • DOI
    10.1109/ASDAM.2004.1441195
  • Filename
    1441195
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3344768