Structure and phase formation in amorphous IrxSi/sub 1-x/ thin films at high temperatures

Experimental data on the phase formation process of amorphous Ir/sub x/Si/sub 1-x/ thin films for thermoelectric applications are presented. The composition x varies between 0.30 and 0.40. The phase formation process at temperatures from 300 K up to 1223 K was investigated by means of X-ray diffraction. Distinct phases were observed at the final stage in dependence on the initial composition: Ir/sub 3/Si/sub 4/, Ir/sub 3/Si/sub 5/, and IrSi/sub 3/. The structure of the Ir/sub 3/Si/sub 5/ phase varies in dependence on the chemical composition of the layer. The electrical resistivity of the as-deposited and of annealed at T=973 K and T=1073 K layers was measured at room temperature and in low temperature range.