Title :
AFM, micro-PL, and PV analyses of CuIn1-xGaxS2 thin films solar cells on stainless steel foil
Author :
Dhere, Neelkanth G. ; Gade, V.S.
Author_Institution :
Florida Solar Energy Center, Cocoa, FL, USA
Abstract :
A dual-chamber, large-area magnetron-sputtering unit was fabricated. CuIn1-xGaxS2 (CIGS2) thin films were prepared by sulfurization of DC magnetron-sputtered CuGa/In precursor on stainless steel foil substrates in Ar:H2S(4%) mixture at 475°C. CIGS2 thin films grew with chalcopyrite CuIn0.7Ga0.3S2 phase with a = 5.67 Å and c = 11.34 Å and preferred {112} orientation. Inhomogeneous broadening, and variation of peak position and amplitude of microPL signal were probably caused by rough morphology and variation in the defect chemistry. Best efficiencies of CIGS2 solar cell on SS flexible foil measured at NREL and NASA GRC were 10.4% (AM 1.5) and 8.84% AM 0 respectively.
Keywords :
atomic force microscopy; copper compounds; foils; indium compounds; photoluminescence; semiconductor device measurement; semiconductor thin films; solar cells; spectral line broadening; sputter deposition; sputtered coatings; stainless steel; surface topography; ternary semiconductors; 10.4 percent; 475 degC; 8.84 percent; AFM; CIGS2; CuIn1-xGaxS2 thin films solar cells; CuInGaS2; PL broadening; efficiency; magnetron-sputtering; micro-PL; rough morphology; stainless steel foil; Magnetic flux; NASA; Photovoltaic cells; Satellites; Solar energy; Space technology; Sputtering; Steel; Substrates; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190719
