DocumentCode :
3344894
Title :
15%, 20 Micron thin, silicon solar cells on steel
Author :
Lochtefeld, Anthony ; Lu Wang ; Carroll, Mariana ; Jianshu Han ; Stryker, Donald ; Bengtson, Susan ; Yu Yao ; Dong Lin ; Jingjia Ji ; Leitz, Christopher ; Lennon, Alison ; Opila, Robert L. ; Barnett, Allen
Author_Institution :
AmberWave, Inc., Salem, NH, USA
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
1364
Lastpage :
1365
Abstract :
A method to laminate a thin monocrystalline Si layer to a conductive and fracture-resistant carrier such as steel has been developed, resulting in a practical design for high volume production of robust ultra-thin (10-20 μm) “kerfless” Si wafers. With this technology front and rear cell features based on the world-record PERL cell design have been integrated. A confirmed efficiency of 15.1% has been achieved on a 20-micron thick one-cm2 solar cell. This 15.1% is believed to be the highest confirmed efficiency achieved with ultra-thin silicon integrated with a conducting substrate.
Keywords :
elemental semiconductors; silicon; solar cells; steel; PERL cell design; Si; fracture-resistant carrier; silicon solar cells; size 10 mum to 20 mum; steel; thin monocrystalline silicon layer; ultra-thin kerfless Si wafers; Doping; Photovoltaic cells; Robustness; Silicon; Steel; Substrates; Surface treatment; epitaxial silicon solar cells; film crystalline silicon; porous silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744397
Filename :
6744397
Link To Document :
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