DocumentCode
3344897
Title
0.74/0.55-eV GaxIn1-xAs/InAsP1-y monolithic, tandem, MIM TPV converters: design, growth, processing and performance
Author
Wehrer, R.J. ; Wanlass, M.W. ; Werrisman, B. ; Carapella, J.J. ; Ahrenkiel, S.P. ; Wilt, D.M. ; Murray, C.S.
Author_Institution
Bechtel Bettis Inc., West Mifflin, PA, USA
fYear
2002
fDate
19-24 May 2002
Firstpage
884
Lastpage
887
Abstract
Thermophotovoltaic (TPV) tandem converter technology is being explored in an effort to improve both the efficiency and power density of TPV systems. Inverted, tandem structures incorporate epitaxially grown 0.74-eV lattice-matched Ga0.47In0.53As and 0.55-eV lattice-mismatched Ga0.28In0.72As diodes. Additionally, a strategy has been developed to allow voltage matching between these two subcells. Performance modeling calculations show that, under typical operating conditions, the 0.74/0.55-eV tandem converter should outperform a 0.5-eV single junction converter by 15% on an efficiency basis and by 15% on a power-density basis. This paper will present details regarding the design, growth, fabrication, and electrical, optical, and structural characterization of voltage-matched tandem TPV devices.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; thermophotovoltaic cells; 0.74 eV; 0.74 to 0.55 eV; Ga0.28In0.72As; Ga0.47In0.53As; GaxIn1-xAs-InAsP1-y; GaxIn1-xAs/InAsP1-y; design; efficiency; growth; performance; power density; processing; tandem MIM TPV converters; thermophotovoltaic tandem converter technology; DH-HEMTs; Diodes; Indium phosphide; NASA; Photonic band gap; Process design; Renewable energy resources; Space technology; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190721
Filename
1190721
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