Title :
0.74/0.55-eV GaxIn1-xAs/InAsP1-y monolithic, tandem, MIM TPV converters: design, growth, processing and performance
Author :
Wehrer, R.J. ; Wanlass, M.W. ; Werrisman, B. ; Carapella, J.J. ; Ahrenkiel, S.P. ; Wilt, D.M. ; Murray, C.S.
Author_Institution :
Bechtel Bettis Inc., West Mifflin, PA, USA
Abstract :
Thermophotovoltaic (TPV) tandem converter technology is being explored in an effort to improve both the efficiency and power density of TPV systems. Inverted, tandem structures incorporate epitaxially grown 0.74-eV lattice-matched Ga0.47In0.53As and 0.55-eV lattice-mismatched Ga0.28In0.72As diodes. Additionally, a strategy has been developed to allow voltage matching between these two subcells. Performance modeling calculations show that, under typical operating conditions, the 0.74/0.55-eV tandem converter should outperform a 0.5-eV single junction converter by 15% on an efficiency basis and by 15% on a power-density basis. This paper will present details regarding the design, growth, fabrication, and electrical, optical, and structural characterization of voltage-matched tandem TPV devices.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; thermophotovoltaic cells; 0.74 eV; 0.74 to 0.55 eV; Ga0.28In0.72As; Ga0.47In0.53As; GaxIn1-xAs-InAsP1-y; GaxIn1-xAs/InAsP1-y; design; efficiency; growth; performance; power density; processing; tandem MIM TPV converters; thermophotovoltaic tandem converter technology; DH-HEMTs; Diodes; Indium phosphide; NASA; Photonic band gap; Process design; Renewable energy resources; Space technology; Substrates; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190721
