DocumentCode
3344914
Title
Multi-wafer growth and processing of 0.6-eV InGaAs monolithic interconnected modules
Author
Murray, Chris ; Newman, Fred ; Murray, Susan ; Hills, Jenifer ; Aiken, Daniel ; Siergiej, Richard ; Wernsman, B. ; Taylo, Dan
Author_Institution
Emcore Photovoltaics, Albuquerque, NM, USA
fYear
2002
fDate
19-24 May 2002
Firstpage
888
Lastpage
891
Abstract
Recent progress in the optical and electrical performance of monolithic interconnected modules (MIMs) has produced an interest in manufacturing large quantities of cells for evaluation. Information resulting from this evaluation is necessary to produce and optimize a TPV system, where a large number of devices with a nominal performance must be available for insertion into series/parallel electrical networks. In this work over 130 wafers comprising three different device designs were grown, with representative wafers from each design processed in a pilot-line manufacturing environment. This paper describes the material growth, device design and processing, and electrical performance of these cells.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; solar cells; thermophotovoltaic cells; 0.6 eV; 0.6-eV InGaAs monolithic interconnected modules; InGaAs; TPV system; device design; device processing; electrical performance; material growth; monolithic interconnected modules; multi-wafer growth; multi-wafer processing; optical performance; pilot-line manufacturing environment; series/parallel electrical networks; Doping; Indium gallium arsenide; Manufacturing processes; Plasma applications; Plasma measurements; Plasma temperature; Process design; Production; Substrates; Temperature control;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190722
Filename
1190722
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