DocumentCode
3345002
Title
Simulation of base boron out-diffusion in SiGe HBT
Author
Kinder, R. ; Beño, P. ; Hulényi, L. ; GeBner, J. ; Schwierz, F. ; Breza, J. ; Grmanová, A.
fYear
2004
fDate
Oct. 17-21, 2004
Firstpage
255
Lastpage
258
Keywords
Annealing; Boron; Capacitive sensors; Computational modeling; Germanium silicon alloys; Heterojunction bipolar transistors; Optical devices; Optical noise; Photonic band gap; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Print_ISBN
0-7803-8335-7
Type
conf
DOI
10.1109/ASDAM.2004.1441209
Filename
1441209
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