DocumentCode :
3345002
Title :
Simulation of base boron out-diffusion in SiGe HBT
Author :
Kinder, R. ; Beño, P. ; Hulényi, L. ; GeBner, J. ; Schwierz, F. ; Breza, J. ; Grmanová, A.
fYear :
2004
fDate :
Oct. 17-21, 2004
Firstpage :
255
Lastpage :
258
Keywords :
Annealing; Boron; Capacitive sensors; Computational modeling; Germanium silicon alloys; Heterojunction bipolar transistors; Optical devices; Optical noise; Photonic band gap; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Print_ISBN :
0-7803-8335-7
Type :
conf
DOI :
10.1109/ASDAM.2004.1441209
Filename :
1441209
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3345002
