Title :
The performance of advanced III-V solar cells
Author :
Mueller, Robert L. ; Gaddy, Edward
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Test results show triple junction solar cells with efficiencies as high as 27% at 28C and 136.7 mw/cm2. Triple junction cells also achieve up to 27.5% at -120C and 5 mw/cm2, conditions applicable to missions to Jupiter. Some triple junction cells show practically no degradation as a result of Low Intensity Low Temperature (LILT) effects, while others show some; this degradation can be overcome with minor changes to the cell design.
Keywords :
III-V semiconductors; gallium arsenide; solar cells; -120 C; 27 percent; 27.5 percent; 28 C; GaAs; advanced III-V solar cells performance; efficiencies; low intensity low temperature effects; triple junction solar cells; Bonding; Diodes; III-V semiconductor materials; Manufacturing; Photovoltaic cells; Production; Protection; Space technology; Temperature; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190726
