DocumentCode
3345038
Title
Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime
Author
Blum, Adrienne L. ; Swirhun, James S. ; Sinton, Ronald A. ; Fei Yan ; Herasimenka, Stanislau ; Roth, T. ; Lauer, K. ; Haunschild, Jonas ; Lim, B. ; Bothe, Klaus ; Hameiri, Ziv ; Seipel, Bjoern ; Rentian Xiong ; Dhamrin, Marwan ; Murphy, John D.
Author_Institution
Sinton Instrum., Boulder, CO, USA
fYear
2013
fDate
16-21 June 2013
Firstpage
1396
Lastpage
1401
Abstract
Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter- and intra-laboratory repeatability. This paper presents results of an international inter-laboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for quasi-steady-state (QSS) mode and ±8% for transient mode for wafer samples and within ±4% for bulk samples.
Keywords
electron-hole recombination; elemental semiconductors; silicon; solar cells; standardisation; SEMI PV13 eddy-current carrier lifetime measurement test method; brick silicon lifetime test instruments; eddy-current wafer; excess-carrier recombination lifetime; quasisteady-state mode; silicon solar cell design; Atmospheric measurements; Electrical resistance measurement; Instruments; Laboratories; Particle measurements; Standards; Transient analysis; charge carrier lifetime; eddy currents; photoconductivity; silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744405
Filename
6744405
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