Electrical characteristics of Hg/sub 1-x/Cd/sub x/Te epilayers subjected to ultrasonic influence

The degradation of electrophysical characteristics of Hg_1-xCd_xTe thin films grown by LPE and MBE as a consequence of the high-frequency and high-intensity elastic deformation effect was investigated It was determined that parameters of Hg_1-xCd_xTe thin films grown by MBE are stable to ultrasonic influence whereas for Hg_1-xCd_xTe thin films grown by LPE the mobility decrease and the change of the conductivity type at low magnetic field wae observed The best agreement between experiment and calculation was obtained in the frame of assumption about forming of the thin layer with opposite conductivity. The possible mechanism of Ihe observing effects was analyzed.