Title :
An investigation of GaSb/GaAs thermophotovoltaic cells
Author :
Fan, Qibin ; Lim, A.L.C. ; Conibee, G.J. ; Bumb, C.W. ; Shields, P.A. ; Nicholas, R.J. ; Haywood, S.K.
Author_Institution :
Dept. of Phys., Univ. of Oxford, Hull, UK
Abstract :
The effect of growth conditions on the electrical and optical properties of p-GaSb/n-GaAs junctions grown by MOVPE has been studied. Low growth temperature (540°C), HCI treatment of the GaAs substrate prior to growth and addition of a 100nm InAs passivation layer were all found to increase the short circuit current (1sc) under illumination and also the spectral response from the GaSb layer. An undoped GaAs buffer increased the open circuit V∝ and improved the diode rectification but at the expense of photocurrent from the GaSb layer. Preliminary results suggest that n-doping the GaAs buffer layer may yield both high V∝ and high current collection.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; passivation; semiconductor growth; short-circuit currents; thermophotovoltaic cells; vapour phase epitaxial growth; 100 nm; 540 degC; GaAs; GaAs substrate; GaSb-GaAs; GaSb/GaAs thermophotovoltaic cells; HCl treatment; InAs passivation layer; MOVPE; diode rectification; electrical properties; growth conditions; n-doping; open circuit; optical properties; photocurrent; short circuit current; spectral response; undoped GaAs buffer; Diodes; Epitaxial growth; Epitaxial layers; Gallium arsenide; Human computer interaction; Lighting; Optical buffering; Passivation; Short circuit currents; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190755
