DocumentCode :
3345321
Title :
Investigation of transport mechanism in silicon solar cells after the exploitation in space
Author :
Budaguan, Boris G. ; Sherchenkov, Alexei A. ; Sizov, Alexei V. ; Grabov, Alexei B.
Author_Institution :
Dept. of Mater. Sci. & Phys. Chem. (MSPC), Moscow Inst. of Electron. Technol., Russia
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
967
Lastpage :
970
Abstract :
The degradation of solar cells leads to the modification of charge carriers transport mechanism. This is accompanied by the changes of I-V characteristic of solar cells. So, in this work the measurements of I-V characteristics and analysis of the charge carriers transport mechanisms in silicon solar cells after long-term exploitation in near-Earth orbit were carried out.
Keywords :
elemental semiconductors; semiconductor device measurement; silicon; solar cells; I-V characteristic; Si; charge carriers transport; near-Earth orbit; silicon solar cells; solar cell degradation; transport mechanism; Charge carriers; Charge measurement; Current measurement; Degradation; Equations; Photovoltaic cells; Silicon; Spontaneous emission; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190760
Filename :
1190760
Link To Document :
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