DocumentCode :
3345353
Title :
Effect of proton irradiation and subsequent thermal annealing on the characteristics of thin-film silicon solar cells and microcrystalline silicon layers
Author :
Kuendig, J. ; Shah, A.
Author_Institution :
Inst. of Microtechnology (IMT), Neuchatel Univ., Switzerland
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
974
Lastpage :
977
Abstract :
In an earlier paper, the authors had reported on the results of a proton irradiation campaign on a series of thin-film silicon solar cells (single- and double-junction). There, a low-temperature annealing was discovered for the microcrystalline silicon solar cells. The present paper links these earlier results with recent investigations on newly irradiated individual microcrystalline layers: the effect of proton irradiation and subsequent thermal annealing steps on the optical and electronic properties of these microcrystalline silicon layers is investigated in detail and is shown to correlate well with the results reported earlier for full cells.
Keywords :
annealing; elemental semiconductors; proton effects; semiconductor thin films; silicon; solar cells; Si; electronic properties; microcrystalline silicon layer; optical properties; proton irradiation; thermal annealing; thin-film silicon solar cell; Amorphous materials; Annealing; Photovoltaic cells; Protons; Semiconductor thin films; Silicon; Substrates; Temperature; Thermal degradation; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190763
Filename :
1190763
Link To Document :
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