Title :
Improvement of reliability characteristics using the N2 implantation in SOHOS flash memory
Author :
Park, Jeong-Gyu ; Oh, Jae-Sub ; Yang, Seung-Dong ; Jeong, Kwang-Seok ; Kim, Yu-Mi ; Yun, Ho-Jin ; Lee, Hi-Deok ; Lee, Ga-Won
Author_Institution :
Electron. Eng. Dept., Chung-nam Nat. Univ., Daejeon, South Korea
Abstract :
In this paper, device performance and reliability characteristics are investigated and discussed in Fin-type SONOS and SOHOS flash memory device. We also proposed the N2 implantation method for improvement of reliability characteristics in SOHOS flash memory device. It shows that data retention characteristic in N2 implantation SOHOS device is improved due to the nitrogen induced-deep traps, while its P/E speed is degraded by additional nitrogen in high-k trapping layer.
Keywords :
flash memories; high-k dielectric thin films; ion implantation; nickel compounds; nitrogen; semiconductor device reliability; silicon compounds; N2; N2 implantation method; SOHOS flash memory devices; SiO-NiO-Si; data retention characteristic; fin-type SONOS flash memory device; high-k trapping layer; nitrogen induced-deep traps; reliability characteristics; Charge carrier processes; FinFETs; Flash memory; High K dielectric materials; Implants; Reliability; SONOS devices; N2 implantation; SOHOS; retention;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-8896-4
DOI :
10.1109/NMDC.2010.5652151
