DocumentCode :
3345612
Title :
Detailed balance efficiency of a three level system with thermionic transitions
Author :
Bremner, S.P. ; Honsberg, C.E.
Author_Institution :
Centre for Photovoltaic Eng., Univ. of NSW, Australia
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
1051
Lastpage :
1054
Abstract :
A three energy level model used in previous detailed balance analyses has been modified to allow the transition of carriers across one of the internal band gaps to be completely non-radiative. The transitions across all three of the band gaps in the model are typically taken to be radiative, however, in this work the transitions across the smaller internal band gap are taken to be thermionic in nature. Calculations using the modified model were performed for GaAs based devices under one sun illumination. The results show an efficiency improvement for the three energy level system over the homojunction limit for low values of the smaller internal band gap. The efficiency improvement is shown to increase as the thermionic rates are increased artificially. The implications of these results in terms of devices such as Quantum Well Solar Cells are discussed.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; quantum well devices; solar cells; thermionic emission; GaAs; balance analyses; detailed balance efficiency; internal band gaps; nonradiative carrier transitions; quantum well solar cells; thermionic transitions; three level system; Australia; Energy states; Lighting; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Power engineering and energy; Solar power generation; Sun; Thermionic emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190786
Filename :
1190786
Link To Document :
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