Title :
An Advance Physics-Based Sub-Circuit Model of IGBT
Author :
Jankovic, Nebojsa ; Zhou, Zhongfu ; Batcup, Steve ; Igic, Petar
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Nis
Abstract :
An advanced physics-based equivalent-circuit model of IGBT has been described featuring a high accuracy in predicting device electrical performance in real circuit applications. A SPICE Level 3 model is employed for simulation of the equivalent DMOSFET, while the voltage dependant drain- to-gate overlapping capacitance and drain ohmic resistance elements are modelled separately. The one-dimensional physics- based model of the low-gain BJT device is developed using the equivalent non-linear lossy transmission line sub-circuit. IGBT model is implemented in PSPICE circuit simulator and high accuracy of the model is demonstrated by comparing the simulation results with the electrical measurements of several test power circuits.
Keywords :
MOSFET; equivalent circuits; insulated gate bipolar transistors; semiconductor device models; PSPICE circuit simulator; drain ohmic resistance; equivalent DMOSFET; equivalent non-linear lossy transmission line sub-circuit; insulated gate bipolar transistors; Accuracy; Capacitance; Circuit simulation; Circuit testing; Electric resistance; Insulated gate bipolar transistors; Predictive models; Propagation losses; SPICE; Voltage;
Conference_Titel :
Industrial Electronics, 2006 IEEE International Symposium on
Conference_Location :
Montreal, Que.
Print_ISBN :
1-4244-0496-7
Electronic_ISBN :
1-4244-0497-5
DOI :
10.1109/ISIE.2006.295636
