Title :
Wide modal gain spectra in the asymmetric multiple-quantum-well heterostructures Ga0.47In0.53As-Ga0.18In0.82As0.4P0.6
Author :
Ushakov, Dmitrii V. ; Kononenko, Valerii K.
Author_Institution :
Belarussian State Univ., Minsk
Abstract :
For asymmetric multiple-quantum-well heterostructures based on Ga0.47In0.53As-Ga0.18In0.82As0.4P0.6 compounds, the detailed theoretical analysis of modal gain spectra is carried out in the framework of the four-band kp-method. Effective procedure of obtaining the wide and practically flat modal gain spectrum is offered. Various designs of the semiconductor sources with different sets of non-uniform excited quantum wells, giving a wide gain spectrum in the 1.28-1.6 mum ranges, are calculated.
Keywords :
III-V semiconductors; excited states; gallium arsenide; gallium compounds; indium compounds; infrared spectra; semiconductor heterojunctions; semiconductor quantum wells; Ga0.47In0.53As-Ga0.18In0.82As0.4P0.6; asymmetric multiple-quantum-well heterostructures; four-band kp-method; infrared spectra; inhomogeneous excitation; modal gain spectra; wavelength 1.28 mum to 1.6 mum; Charge carrier processes; Chemical analysis; Doping; Infrared spectra; Infrared surveillance; Optical waveguides; Physics; Quantum well devices; Spectroscopy; Tunable circuits and devices; infrared; inhomogeneous excitation; k⋅p method; modal gain; multiple quantum wells; region; wide spectrum;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling, 2008. LFNM 2008. 9th International Conference on
Conference_Location :
Crimea
Print_ISBN :
978-1-4244-2526-6
Electronic_ISBN :
978-1-4244-2527-3
DOI :
10.1109/LFNM.2008.4670384
