Title :
Comparison of a-Si/a-SiGe tandem cell performance using silane or disilane for deposition of the amorphous silicon germanium intrinsic layer
Author :
Ganguly, G. ; Carlson, D.E. ; Arya, R.R.
Author_Institution :
North American Technol. Center, BP Solar, Toano, VA, USA
Abstract :
We have investigated the effects of using hydrogen-diluted mixtures of either silane and germane or disilane and germane for deposition of amorphous silicon germanium intrinsic layers in a-Si/a-SiGe tandem devices with all the other layers were unchanged. The ´optimized´ DC plasma induced deposition conditions have been found using screening, followed by response surface design of experiments. Multiple deposition runs of initial performance and its light induced degradation have been compared.
Keywords :
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; plasma CVD coatings; semiconductor device measurement; semiconductor materials; semiconductor thin films; silicon; solar cells; GeH4; Si-SiGe; SiH4; a-Si/a-SiGe tandem cell performance; amorphous silicon germanium intrinsic layer; disilane; germane; optimized deposition conditions; screening; silane; Amorphous silicon; Costs; Current measurement; Degradation; Electrons; Germanium silicon alloys; Hydrogen; Plasma displays; Silicon germanium; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190801
