• DocumentCode
    3345890
  • Title

    Optical design and analysis of textured a-Si solar cells

  • Author

    Hegedus, Steven ; Sopori, Bhushan ; Paulson, P.D.

  • Author_Institution
    Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    1122
  • Lastpage
    1125
  • Abstract
    The effect of texture on enhancement and losses in photocurrent in a-Si solar cells is explored using PVOPTICS software and measurements on a-Si device structures. The texture angle has a major impact on light trapping and internal reflection. Increasing the angle causes better internal trapping in the i-layer, but also higher SnO2/a-Si reflection losses, as well as SnO2 and metal absorption losses. Parasitic absorption in the textured SnO2 due to back reflected light is 1-2 mA/cm2 for typical designs. N-i-p cells have a fundamental advantage over p-i-n cells since the textured TCO is at the rear of the device leading to lower losses.
  • Keywords
    elemental semiconductors; optical losses; photoconductivity; semiconductor device models; silicon; solar cells; surface texture; PVOPTICS software; Si; internal reflection; light trapping; n-i-p cells; parasitic absorption; photocurrent; reflection losses; texture angle; textured a-Si solar cells; Absorption; Optical buffering; Optical design; Optical devices; Optical films; Optical losses; Optical reflection; Optical scattering; Photoconductivity; Photovoltaic cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190803
  • Filename
    1190803