Title :
Materials and device technologies for HBT-based Long-wavelength OEIC Photoreceivers
Author :
Pollack, Martin A.
Author_Institution :
AT&T Bell Laboratories
Keywords :
Costs; Heterojunction bipolar transistors; Indium gallium arsenide; Lithography; Materials reliability; Monolithic integrated circuits; Noise reduction; Optoelectronic devices; Photodetectors; Preamplifiers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
DOI :
10.1109/LEOS.1990.690601