Title :
8-bit 5-MS/s per-pixel ADC in an 8-by-8 Matrix
Author :
Reckleben, C. ; Hansen, K. ; Kalavakuru, P. ; Diehl, I.
Author_Institution :
Deutsches Elektronen-Synchrotron (DESY), Hamburg, Germany
Abstract :
A single-slope 8-bit 5-MS/s Wilkinson-type analog-to-digital converter for the DSSC mega-pixel X-ray imager was designed. Due to its simplicity, low power consumption, and small area requirement this type of ADC is suitable for pixel-level implementations. 625-ps time stamps are generated globally by means of an 8-bit Gray-code counter. They are distributed column-wise to the pixel blocks together with a conversion-start signal along 13-mm long transmission lines. The analog input voltage is sampled-and-held on a capacitor. A pixel-internal current source is used to generate a voltage ramp. The conversion into a digital word is done when the ramp voltage equals the reference voltage, and the corresponding time stamp is latched. The final readout chip will be a 64-by-64 pixel matrix. The chip prototype comprises an 8-by-8 ADC matrix representing a single 64-pixel column of the final matrix. It is fabricated in the IBM 8M1P 130-nm CMOS technology. Linearity, noise, and temperature- dependent effects are evaluated. Measurements demonstrate the achievement of a signal-to-noise ratio of 67 dB, a mean DNL of less than 0.3 LSB, and an INL below 0.5 LSB for the 5-MHz sampling rate. The area and power dissipation of the ADC´s pixel circuitry amounts to 0.0139 mm2 and 634 μW, respectively. The global blocks require an area of 0.0143 mm2, and consume a mean power of 3.07 mW.
Keywords :
CMOS integrated circuits; Gray codes; X-ray apparatus; analogue-digital conversion; nuclear electronics; readout electronics; sample and hold circuits; semiconductor counters; ADC matrix; CMOS technology; DSSC megapixel X-ray imager; Gray code counter; analog input voltage; analog-digital converter; pixel internal current source; pixel level implementation; power 3.07 mW; power 634 muW; ramp voltage equals; readout chip; reference voltage; sample-and-hold capability; signal-noise ratio; single slope Wilkinson type ADC; size 0.0139 mm; size 0.0143 mm; small area requirement; voltage ramp generation; Delay; Latches; MOS devices; Photonics; Semiconductor device measurement; Switches;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location :
Valencia
Print_ISBN :
978-1-4673-0118-3
DOI :
10.1109/NSSMIC.2011.6153987