Title :
Characterization of diphasic nc-Si/a-Si:H thin films and solar cells
Author :
Zhang, Shibin ; Xu, Yanyue ; Hu, Zhihua ; Wang, Yongqian ; Zeng, Xiangbo ; Diao, Hongwei ; Wang, Wenjing ; Kong, Guanglin ; Liao, Xianbo
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
Hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystalline state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared with an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm2 (AM1.5, 100 mW/cm2).
Keywords :
Raman spectra; absorption coefficients; elemental semiconductors; hydrogen; nuclear magnetic resonance; photoconductivity; plasma CVD coatings; semiconductor device measurement; semiconductor thin films; silicon; solar cells; 8.02 percent; 8.51 percent; NMR; PECVD; Raman scattering; Si; Si:H; constant photocurrent method; deep-defect density; diphasic nc-Si/a-Si:H thin films; efficiency; hydrogenated silicon films; light soaking; microstructural properties; nuclear magnetic resonance; optical absorption coefficient; p-i-n junction solar cell; photoelectronic properties; plasma enhanced chemical vapor deposition; solar cells; Crystal microstructure; Crystallization; Magnetic films; Nuclear magnetic resonance; Optical films; Photovoltaic cells; Plasma chemistry; Semiconductor films; Silicon; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190818
