Title :
Progress towards the practical implementation of the intermediate band solar cell
Author :
Luque, A. ; Marti, A. ; Wahnón, P. ; Cuadra, L. ; Tablero, C. ; Stanley, C. ; McKee, A. ; Zhou, D. ; Könenkamp, R. ; Bayón, R. ; Belaidi, A. ; Alonso, J. ; Ruiz, J. ; Fernández, J. ; Palacios, P. ; López, N.
Author_Institution :
Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain
Abstract :
The intermediate band solar cell is a novel solar cell with the potential of achieving a limiting efficiency of 63.2 % on the basis of the absorption of two sub-bandgap photons to create one electron-hole pair. The path towards its practical implementation has started following three strategies: a) Engineering the IB material through quantum dot technology, b) Direct synthesis of the IB material and c) creation of a localized absorber layer within a highly porous large bandgap semiconductor.
Keywords :
porous semiconductors; semiconductor device measurement; semiconductor quantum dots; solar cells; wide band gap semiconductors; 63.2 percent; intermediate band solar cell; limiting efficiency; porous large bandgap semiconductor; Absorption; Conducting materials; Degradation; Electrons; Inorganic materials; Photonic band gap; Photovoltaic cells; Quantum dots; Semiconductor materials; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190820
