Title :
Layer transferred quasi monocrystalline porous silicon for thin silicon solar cell
Author :
Majumdar, D. ; Chatterjee, S. ; Das, J. ; Gangopadhyay, U. ; Dutta, S.K. ; Saha, H.
Author_Institution :
Dept. of Electron. & Tele-communication Eng., Jadavpur Univ., Kolkata, India
Abstract :
Direct use of quasi monocrystalline porous silicon (QMPS) layer for thin silicon solar cell by layer transfer process is an attractive possibility. QMPS layer is obtained by annealing of double layer porous silicon, a thin high porous layer below a low porous relatively thick layer of several microns. These layers are reported to have higher absorption coefficient compared to crystalline silicon at the wavelength of interest for solar cells. A model has been developed to account for higher absorption coefficient of QMPS layer. The model compares the experimental results well and it is extended to absorption coefficient of QMPS layer for different thickness, porosity etc. Computed values of absorption coefficient and some data relating to electronic properties of QMPS layers are used to investigate solar cell potential of QMPS layers.
Keywords :
absorption coefficients; annealing; elemental semiconductors; porosity; porous semiconductors; semiconductor device models; silicon; solar cells; QMPS; Si; absorption coefficient; annealing; layer thickness; layer transfer process; layer transferred quasi monocrystalline porous silicon; porosity; thin silicon solar cell; Absorption; Annealing; Costs; Crystallization; Fabrication; Light scattering; Photovoltaic cells; Semiconductor films; Silicon; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190825