DocumentCode :
3346203
Title :
Layer transferred quasi monocrystalline porous silicon for thin silicon solar cell
Author :
Majumdar, D. ; Chatterjee, S. ; Das, J. ; Gangopadhyay, U. ; Dutta, S.K. ; Saha, H.
Author_Institution :
Dept. of Electron. & Tele-communication Eng., Jadavpur Univ., Kolkata, India
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
1210
Lastpage :
1213
Abstract :
Direct use of quasi monocrystalline porous silicon (QMPS) layer for thin silicon solar cell by layer transfer process is an attractive possibility. QMPS layer is obtained by annealing of double layer porous silicon, a thin high porous layer below a low porous relatively thick layer of several microns. These layers are reported to have higher absorption coefficient compared to crystalline silicon at the wavelength of interest for solar cells. A model has been developed to account for higher absorption coefficient of QMPS layer. The model compares the experimental results well and it is extended to absorption coefficient of QMPS layer for different thickness, porosity etc. Computed values of absorption coefficient and some data relating to electronic properties of QMPS layers are used to investigate solar cell potential of QMPS layers.
Keywords :
absorption coefficients; annealing; elemental semiconductors; porosity; porous semiconductors; semiconductor device models; silicon; solar cells; QMPS; Si; absorption coefficient; annealing; layer thickness; layer transfer process; layer transferred quasi monocrystalline porous silicon; porosity; thin silicon solar cell; Absorption; Annealing; Costs; Crystallization; Fabrication; Light scattering; Photovoltaic cells; Semiconductor films; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190825
Filename :
1190825
Link To Document :
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